The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
H atom densities are measured by threshold ionization mass spectrometry in a H 2 parallel-plate RF discharge. Variations of H density near the surface in steady-state discharge conditions reveal different surface loss probabilities γ on stainless steel, hydrogenated amorphous silicon (a-Si:H) and oxidized silicon. Absolute γ values are obtained from time-resolved H density measurements in...
Considerable quantities, > 3 monolayers, of hydrogen (deuterium) were absorbed in subsurface sites at Ni(100) surfaces via impact of thermal H (D) atoms. Competitive to a direct transition (penetration) into the bulk with an initial probability of 4.5 10 -2 impinging H (D) atoms abstract adsorbed D (H) with an initial abstraction probability R = 0.25 and cross section of 1.6 ...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.