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Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2×1) substrates were characterized using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, atomic force microscopy, and high-resolution transmission electron microscopy. We report that a flat and highly homogeneous magnesium oxide with well-defined interfaces could be grown at room temperature (RT)...
The redistribution of arsenic during the reaction of Ni thin films with arsenic-doped Si(100) substrates is studied by in situ X-ray diffraction (XRD) and atom probe tomography. In situ XRD showed the formation of a transient phase that forms isolated grains at the δ-Ni 2 Si/Si interface. Arsenic is not incorporated in δ-Ni 2 Si but accumulates at the δ-Ni 2 Si/Si interface...
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