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A compact X-band active integrated antenna (AIA) for microwave power transmission with a amplifier on a multilayer substrate was fabricated. The amplifier with a GaAs monolithic microwave integrated circuit (MMIC) in an RF via package was integrated in the antenna. A copper plate for ground and heat dissipation was sandwiched between the substrate. The far-field measurement confirmed a equivalent...
This paper reports a new family of GaAs MMICs for E-band communications applications. Both single-ended and balanced versions are reported with minimum output power levels of 26 dBm and 28 dBm respectively for both the 71–76 GHz and the 81–86 GHz. bands. This is 3 dB (2 times) higher than the current state-of-the-art. The single-ended version of the low-band (71–76 GHz) MMIC demonstrated an output...
This paper presents micromachined GaAs monolithic microwave integrated circuits (MMIC)-based radio frequency (RF) planar spiral inductors with metal shores (MS) and patterned ground shields (PGS). The inductors are fabricated using a GaAs MMIC process without any additional step. MS and PGS are located and inserted between the planar spiral inductors and the GaAs substrate respectively for depressing...
For wireless high-data-rate applications, channel sounding, and radar sensors, the unlicensed frequency band around 60 GHz is of relevant commercial interest. Currently, there is enormous progress in the field of integrating 60 GHz technology in compact systems using multilayer technology and reducing costs for mass production. For full channel characterization, but also for consumer applications,...
The design and fabrication of RF on-chip spiral inductors with metal shores (MS) located and patterned ground shields (PGS) inserted between spiral inductors and the GaAs substrate are proposed in this paper, in order to minimize substrate losses. And inductors are processed by the back etching micromachining technology for further improving the performance of inductors. These inductors provide the...
The paper deals with the SELEX-SI Transmit/Receive Module (TRM) technology and related radar applications. Since the end of '90s SELEX-SI started its activities on the active technology, establishing a 20 years Road Map including GaAs and GaN components and evolving through the increase of effective generated power and efficiency, and through the decrease of Noise Figure for sensors applications....
In order to design a small antenna on the gallium arsenide monolithic microwave integrated circuit (MMIC), An H-shaped patch is designed. Initial experimental and theoretical characterization of the proposed structure has been carried out. It has been shown that the size of proposed patch antenna can be reduced to as low as one tenth of that of a half wavelength patch resonant at 6 GHz, saving significant...
The great flexibility of three-dimensional multilayer technology which newly developed spiral inductors have been designed and optimized. The chosen approach for the spiral implementation loaded is a coplanar wave guide (CPW) transmission lines. The multilayer spiral inductors are very compact and having resonant frequency band between 5 GHz to 70 GHz. The area of multilayer inductor is nearly four...
In this work, spiral inductor structures employing SiN film were fabricated on GaAs substrate for a suppression of LO and its second harmonic leakage signals. Concretely, they were properly designed so that the self-resonance frequency was accurately tuned to LO and its second harmonic frequency, and they were integrated on the downconverter MMIC. Owing to the optimally designed on-chip spiral inductor...
Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1×1012 cm-2 and 9800 cm2/Vs electron mobility were grown on 4” GaAs substrates using a graded quaternary InAlGaAs...
This paper presents a new wafer level packaging (WLP) technique that combines thin, low cost organic layers with high performance MMICs. More specifically, we present a GaAs-based single stage amplifier covered with layers of a low loss liquid crystal polymer organic material. It was observed that the RF performance of the MMIC is virtually unaffected by this technique unlike conventional packaging...
In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been realized by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron...
A highly integrated silicon platform (Hi-Mission) for high frequency applications is introduced. This platform utilizes heterogeneous MCM-D technology with integrated passive devices together with silicon and GaAs MMIC technology developed for the automotive UWB radar (SRR) frequency band from 77 - 81 GHz. Developments are described in the area of MCM-D process development, MMIC, integrated phased...
A series of reliability qualification tests have been performed on GaAs MMICs with SnAg solder bumps assembled onto laminate substrates. Qualification vehicles included both MMIC die and daisy chain structures; the former to assess any reliability issues related to the GaAs wafer process, and the latter to focus directly on reliability concerns related to the bumps. We have observed that significant...
This paper provides a short review of radio frequency/microwave power amplifiers (PAs) and their critical role in a modern satellite communication system. Authorspsila original design contributions are also highlighted.
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
Slot antennas are proposed for integration into GaAs monolithic phased arrays. The characteristics of suitable slot radiators are discussed and a technique for measuring the input impedance is described. Examples in the 20 to 30 GHz range show that the geometry of the slot may be varied to obtain input impedances which allow matching to either active MMIC devices or to a 50 Ω system.
Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3 dB bandwidth of 1 GHz have been measured from the amplifiers.<<ETX>>
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