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The far-infrared photoconductivity due to shallow donors was measured in semi-insulating GaAs for different states of the EL2 defect - normal, metastable, and during the transition - with and without hydrostatic pressure. The results show that the intra-donor transition line broadening observed previously after transferring the EL2 to the metastable configuration cannot be due to lattice distortion...
The hydrostatic pressure coefficients of V^{3+/2+} acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni^{2+/1+} double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni^{2+/1+} level the strong pressure dependence of the capture cross-section activation energy...
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