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A research of process, voltage and temperature variation influence on PLL system and stabilization methodology of VCO's control voltage is shown. PLL control voltage stabilization methodology provides robust mechanism to stabilize PLL's control voltage and decrease power consumption. Proposed stabilization principle was realized by excluding leakage current of a MOSFET capacitor which is caused by...
Logic-level estimators of leakage currents, in nanoscale standard-cell-based designs, are relevant for the dramatic speed advantage with respect to analog SPICE-level simulation. We propose a novel logic-level leakage estimation model based on the characterization of voltages at the internal nodes of digital cells, in conjunction with the characterization of leakage currents in a single field-effect...
A supply voltage control technique for realizing low power LSI is utilized not only for general purpose processors, but also for custom ASIC thanks to advanced LSI design environments. Fine grain supply voltage control in time domain in power gating and DVFS scheme are seen as promising techniques to reduce power consumption. However, they require additional energy consumption for control themselves...
This paper presents a novel input/output interface circuit for field programmable gate array (FPGA) devices, which has high voltage tolerant and PCI compliant capabilities. In the proposed circuit, dynamic gate and N-well bias technology is used to eliminate gate-oxide overstress and Pad to output supply (Vcco) leakage current when FPGA devices operate with high voltage input, and to ensure that over-voltage...
A fully bidirectional mixed-voltage I/O buffer using a gated Floating N-well circuit is presented. In addition, to provide appropriate gate voltages for Output stage, a Dynamic gate bias generator without gate-oxide overstress effect is implemented. The proposed I/O also takes advantage of a novel Gate-tracking circuit and a PAD voltage detector by means of eliminating the leakage current such that...
A low voltage interface circuit with a high voltage tolerance enables devices with different power supply levels to be efficiently coupled together without significant leakage current or damage to the circuits. The interface circuit includes an impedance control circuit, an output buffer, an input buffer, an isolation circuit and a pull up protection circuit. When a high voltage is applied to the...
SRAM cells with Vth-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.
The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared into 65 nm low-power PD-SOI technology, taking into account all the SOI specific effect. Especially, it is shown that the leakage reduction techniques...
An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FinFET, we have successfully demonstrated...
The dramatic increase in leakage current, coupled with the swell in process variability in nano-scaled CMOS technologies, has become a major issue for future IC design. Moreover, due to the spread of leakage power values, leakage variability cannot be neglected anymore. In this work an accurate analytic estimation and modeling methodology has been developed for logic gates leakage under statistical...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 Omega-mm2) is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic...
Technology scaling has entered a new era, where the chip performance is constrained by its power dissipation. Although the power limits vary with the application domain, they dictate the choice of technology, and architecture, and dictate the use of implementation techniques that trade off performance for power savings. This paper examines the technology options in the power-limited scaling regime,...
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