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A merged-diffusion dual-gate CMOS device model is presented in this paper. The proposed large-signal model consists of two intrinsic BSIM3v3 nonlinear models and parasitic components. The parasitic elements, including the substrate networks, the distributed resistances, and the inductances, are extracted from the measured S-parameters. In order to verify the model accuracy, a cascode configuration...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
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