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The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
A robust torque sensor with rapid response was constructed by forming magnetostrictive layers and mounting coils on a carbon steel shaft. A sensitive and reliable Fe40Ni56Cr4 magnetostrictive layer was formed using a low-pressure plasma spray method. A magnetic field perpendicular to the magnetostrictive layer plane is generated by a current flowing through the twin coils to magnetize the steel shaft...
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