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This paper presents two circuits for implementing the restore operation of a non-volatile (NV) memory cell in which data from a programmable metallization cell (PMC) can be copied (restored) into a static random access memory (SRAM). In the first proposed design, a transmission gate is added to each row of cells of the memory array in which a concurrent error detection (CED) circuit is also present...
Carbon nanotube (CNT) non-volatile memory provides excellent cell characteristics of >1011 endurance, low power, fast <5ns array program, and multi-level cell (MLC) potential. For the first time, optimal program methods are investigated considering speed, power and cell variability. Discrete cells are measured and a multiple-pulse reset scheme is proposed to reduce verify-reset time and a gate...
Memristive switches are promising devices for future nonvolatile nanocrossbar memory devices. In particular, complementary resistive switches (CRSs) are the key enabler for passive crossbar array implementation solving the sneak path obstacle. To provide logic along with memory functionality, “material implication” (IMP) was suggested as the basic logic operation for bipolar resistive switches. Here,...
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