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We propose a new concept of mounting structure for high- temperature operable power semiconductor devices such as Silicon Carbide (SiC) or Gallium Nitride (GaN) with high reliability. The proposed structure is composed by high purity aluminum (Al) as a circuit metal on substrate and high- temperature resistant joint material as a chip joint layer. In this structure, the circuit metal can deform easily...
This paper presents the development and evaluation of a large-area carbon-silicon carbide (C-SiC) based composite board material that has the advantages of organic boards in terms of large-area processability and machinability at potentially low-cost while retaining the high stiffness (> 200 GPa) and Si-matched coefficient of thermal expansion (CTE) (~ 2.5 ppm/degC) of ceramics. Test vehicles were...
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