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In state-of-the-art silicon based process technologies, strained and relaxed SiGe, strained-silicon layers, and process-induced stress are widely present. Based on a literature review, we developed and calibrated continuum and kinetic Monte Carlo process models for chemical and stress effects in SiGe (Zographos et al. in AIP Conf. Proc. 1496:212–216, 2012). In this paper, we explain in full detail...
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