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In this work we have fabricated inorganic Silicon solar cells coated by a thin layer of Al-doped ZnO (ZnO:Al). Planar solar cells were fabricated by spin on dopant diffusion method. Thin layers of ZnO:Al were deposited by Atomic Layer Deposition method at different temperatures and ZnO/Al ratios. As a result of the deposition of a large bandgap material on top of the sample, it was found that both...
Transparent and conductive microcrystalline silicon carbide (μc-SiC:H) thin films are an excellent window layer for thin film solar cells. For amorphous silicon based solar cells, p-type conductive μc-SiC:H window layers were deposited by the hot-wire chemical vapor deposition (HWCVD) technique. Monomethylsilane (MMS) highly diluted in hydrogen was used as the SiC source in favor of SiC deposition...
Subbandgap defects in polycrystalline silicon thin films are investigated using photothermal deflection spectroscopy and photoluminescence. By applying rapid thermal annealing and hydrogen passivation, samples of different material quality are fabricated. An increasing defect absorption with increasing annealing temperature was measured, although the open circuit voltage of the respective solar cells...
This paper reports new data and findings related to the decreased performance of a mono-crystalline silicon (c-Si) photovoltaic (PV) system in the northeastern United States when compared with an amorphous silicon (a-Si), thin film system. These findings are based on a kWh per installed kW basis during a warm summer period with relatively high ambient temperatures. Electric utilities will become increasingly...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
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