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Spatial atomic layer deposition (ALD) of intrinsic zinc oxide (i-ZnO) films is scaled up from the laboratory to the industrial level, and the film properties are investigated in detail. A high growth rate of 35 nm/min is achieved. The deposited films are transparent and have an unusually high resistivity of about 100 Ω · cm. This is attributed to the extremely short precursor exposure and purge duration...
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