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The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward Indium Nitride (with different doping level 2.0 · 1018 and 8.3 · 1018 cm−3) over the wide temperature range (4.2–380 K). The growing curves are obtained in the entire investigated temperature range for both doping level. They are explained within the mechanism of thermionic current flow through metal...
The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward Indium Nitride (with different doping level 2.0 · 1018 and 8.3 · 1018 cm−3) over the wide temperature range (4.2–380 K). The growing curves are obtained in the entire investigated temperature range for both doping level. They are explained within the mechanism of thermionic current flow through metal...
Construction and technology of multisectional thermoelements for generators working at the temperatures up to 1200 K were developed. Semiconductor materials with increased dimensionless thermoelectric figure of merit (ZT up to 1.4) were proposed for the fabrication of thermoelement sections. Complex investigations of thermal and electrical parameters for thermoelectric materials were carried out....
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