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Metal Organic Decomposition(MOD)-made BaTiO3 thin films were newly examined whether a ferroelectric resistive switching is available in the film by investigating the relation between current conduction and ferroelectricity and the behaviors of resistive hysteresis. BaTiO3 thin film annealed at 850°C shows remanent polarization of about 4 µC/cm2 and coercive field of about 110 kV/cm. The resistive...
Reproducible resistance switching phenomenon in metal oxides is attributed to the non-linear oxygen ions transport. Here we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanism. Numerical simulation results reveal the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier,...
Current topics related to scanning tunneling microscopes (STMs) and atomic force microscopes (AFMs) are reviewed. The first two topics concern recent applications of STMs and AFMs as microscopes with atomic resolution, and recent experiments on atomic and molecular manipulation using STMs. A new multifunctional scanning probe microscope (SPM) system incorporating an AFM/STM is then introduced. Finally,...
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