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The influence of deposition conditions on structural and electrical properties of amorphous gallium arsenide (a-GaAs) thin films, deposited by RF sputtering at two substrate temperatures TS=220°C (glass substrates) and TS=400°C (Mo and ITO/glass substrates), is studied by both X-ray diffraction and electrical dark conductivity σ measurements, in the range (−150°C to +150°C) of temperature.The increase...
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