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Neodymium-doped silicon-rich silicon oxide thin films SiO x :Nd (1≤x≤2) were deposited by thermal co-evaporation of SiO and SiO 2 and annealed at temperatures up to 1200°C. Due to the phase separation process induced by annealing treatments, amorphous silicon nanoparticles (aSi-np) are obtained. For annealing temperatures equal to or above 1000°C, silicon nanocrystals (Si-nc) embedded...
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