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This contribution derives an efficient approach to model a coupled electro-thermal design problem for transient system simulation, using an analogue simulator, like SPICE. It introduces the electrical and thermal modelling procedures and the coupling of both models. The electrical model is based on the fundamental equations of semiconductor physics. Using the respective physical parameters the model...
Along with decrement in size of nanoelectronic devices, they are more prone to the effects of transient faults. Therefore, investigating the effects of such faults is of great importance. Due to high count of transistors in nanoelectronic devices, performing simulation by HSPICE is a time consuming process. Hence, several mathematical models have been proposed. However, our proposed model is simple...
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
Heavy-ion-induced single-event transients (SET) are studied by device simulation on an ATMEL spatial component: the CMOS bulk 0.18 mum inverter. The wide temperature range of a spatial environment (from 218 to 418 K) can modify the shape of the SET. Thus, an investigation of the SET propagation through a 10-inverter logic chain is performed in the 218-418 K temperature range, and the threshold LET...
The modeling of the semiconductor devices and the need for simulation became currently very essential in power electronics. It permits at the same time to reduce the time and the development costs of the devices, as it makes thereafter to increase the reliability of the designed circuits. By the present article, we could prove the possibility to develop behavioral and electrothermal circuit models...
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