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We prepared silicon carbide (SiC) thin films by hot-wire chemical vapor deposition (HW-CVD) using methane as a carbon source gas at substrate temperature of 325degC and investigated the influence of filament temperature, Tf, on the structure and optical properties of the resulting films. X-ray diffraction patterns showed that film prepared at Tf=1400degC was amorphous SiC:H and that films prepared...
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