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This paper presents a comparison of two gamma radiation sensors intended to be embedded in CMOS integrated circuits. Both sensors are based on a current source, whose output depends upon the cumulated radiation dose, followed by a current-frequency converter. The two sensors differ in the sensing elements: one uses conventional transistors and the other a floating gate transistor. Results are discussed...
The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were...
Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the breakdown condition in Geiger mode at low voltage...
Post-treatment of the sensing film in tin oxide gas sensor arrays is widely used to improve the selectivity in gas recognition applications. This letter describes the characterization study of an integrated tin oxide gas sensor array chip in which the sensing films are modified using metal additives and ion implantations. Measurement results reveal that metal additives present a higher impact on the...
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