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In this paper, general analytical models for threshold voltage Vt and subthreshold slope S of single gate (SG), symmetric double gate (DG) and ground plane (GP) MOSFETs are proposed. The effect of channel strain on Vt?? S and drain induced barrier lowering (DIBL) is also investigated. The proposed model has been employed to calculate Vt?? S and DIBL for various MOS structures. Additionally simulation...
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