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The design of analog and radio-frequency (RF) circuits in CMOS technology has become increasingly more difficult as device modeling faces new challenges in the deep sub micrometer regime and emerging circuit applications. Double gate MOSFETs show greater promise in this regard with improved short channel effects, high gate control and reduced leakage. But still they may be engineered for better performances...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
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