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A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1times1012 cm-2, respectively. To enable a maximum extrinsic transconductance gm,max of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An...
Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-fmax reported to date are presented here. The 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs show fmaxof 520 GHz, fT of 440 GHz, and maximum transconductance (gm) of 1100 mS/mm at a drain current of 333 mA/mm. The combinations of fmax and fT are the highest data yet reported for mHEMTs. These...
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