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This paper reports a novel method for producing low ohmic contact resistance, RC, as well as low sheet resistance, Rsh, on AlN/GaN MOS-HEMT structures. The method relies on the protection of the very sensitive AlN epi-layer from exposure to liquid chemicals during processing using evaporated Al, which on thermal oxidation forms Al2O3. The Al2O3 acts as a surface passivant and as a gate dielectric...
The fabrication and performance of 0.25- mum gate length GaAs-channel MOSFETs using the wet thermal native oxide of InAlP as the gate dielectric are reported. A fabrication process that self-aligns the gate oxidation to the gate recess and metallization to reduce the source access resistance is demonstrated for the first time. The fabricated devices exhibit a peak extrinsic transconductance of 144...
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