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In this work, by means of Monte Carlo simulations we analyze the dependence of the DC drain current value in a 80 nm-gate InAlAs/InGaAs HEMTs on the frequency of a sinusoidal signal superimposed to the DC gate bias. Interestingly, a resonant peak appears in the drain current response, which lies in the THz frequency range, in good agreement with recent experiments made on similar devices. Moreover,...
We report a Monte Carlo study of an InP-based InAlAs/InGaAs velocity modulation transistor (VMT) based on the double-gate high electron mobility transistor (DG-HEMT), a HEMT with two opposite gates controlling the carrier flow through the conducting channel. In the VMT the source and drain electrodes are connected by two channels with different mobility, and electrons are transferred between the channels...
The selective oxidation on InAlAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative...
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