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A realistic 40 nm InAs high electron mobility transistor is studied using a two-dimensional, full-band, and atomistic Schrodinger-Poisson solver based on the sp3d5s*. tight-binding model. Bandstructure non-parabolicity effects, strain, alloy disorder in the InGaAs and InAlAs barriers, as well as band-to-band tunneling in the transistor OFF-state are automatically included through the full-band...
The selective oxidation on InAlAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative...
We achieved a minimum noise figure (NFmin) of 1.0 dB at a frequency of 90 GHz, a current gain cutoff frequency (fT) of 520 GHz and a maximum oscillation frequency (fmax) of 425 GHz for a 35-nm-gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistor (HEMT) biased at a drain-source voltage (Vds) of 0.8 V and a gate-source voltage (Vgs) of 0.0 V. The simultaneous achievement...
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