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In this paper, a generalized analysis of Asymmetrically-Recessed Double Gate High Electron Mobility Transistor (DGHEMT) to realize high breakdown voltage is carried out. As with aggressive scaling in FETs the short-channel effects like Vth roll-off, degradation in cut-off frequency, transconductance etc becomes unavoidable at nanometer gate-length. Recently, DGHEMT has been proposed by Wichmann et...
In this work, by means of Monte Carlo simulations we analyze the dependence of the DC drain current value in a 80 nm-gate InAlAs/InGaAs HEMTs on the frequency of a sinusoidal signal superimposed to the DC gate bias. Interestingly, a resonant peak appears in the drain current response, which lies in the THz frequency range, in good agreement with recent experiments made on similar devices. Moreover,...
In this paper for the first time, the logic performance of Schottky-gate In0.7Ga0.3As QWFETs is measured and evaluated against that of advanced Strained Si MOSFETs from Vcc = 0.5 to 1.0V. The QWFET is shown to have measured drive current gain over the Si MOSFET for the entire Vcc range. Effective velocity (Veff) of the QWFET exhibits 4.6X-3.3X gain over the Si MOSFET. The high Veff enables 65% intrinsic...
The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.
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