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Resonance detection of terahertz radiation by nanometer field-effect transistors GaAs/AlGaAs and transistor structure GaAs/InGaAs with large area slit grating gate has been measured. For these transistors peaks in the resonance photoresponse curve are tunable with gate voltages in accordance with the Dyakonov-Shur theory.
Through a combination of measurement techniques, we study the interface properties of In0.65Ga0.35As transistor with ALD deposited Al2O3 gate dielectric. We show that the interface trap density at In0.65Ga0.35As/Al2O3 interface can be relatively high, but the transistor still exhibits inversion characteristics. A detailed profiling of the interface traps shows that majority of the interface traps...
Through a detailed evaluation of various dielectrics, we address the primary challenges associated with gate stacks on high electron mobility InGaAs channels. More specifically we address key gate stack issues including a) EOT scalability for high performance and electrostatic control (this work CET ~0.78 nm) with acceptable leakage both at operating and offstate for low power (this work Jg ~1 A/cm...
Electrical characteristics of oxide-In0.2Ga0.8As interface in ultra-high vacuum (UHV)-deposited Al2O3(3 nm)/Ga2O3 (Gd2O3) (8.5 nm) on n- and p-In0.2Ga0.8As/GaAs are studied. Capacitance-voltage (C-V) measurements under light illumination and under wide range of temperatures as well as corresponding conductance-voltage (G-V) measurements were carried out. Extremely high-quality interfaces with free-moving...
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