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We have experimentally investigated the trade-offs involved in thinning down the channel of III-V FETs with the ultimate goal of enhancing the electrostatic integrity and scalability of these devices. To do so, we have fabricated InAs HEMTs with a channel thickness of tch = 5 nm and we have compared them against, InAs HEMTs with tch = 10 nm. The fabricated thin-channel devices exhibit outstanding...
Memory structures based on InAs nanocrystals directly grown by molecular beam epitaxy (MBE) on SiO2 have been studied. The nanocrystals have a typical diameter of 5 nm and the density is about 2 times 1011 cm-2. High resolution TEM measurements have shown high crystalline quality and low size dispersion. Using these 7 nm-quantum dots, a test structure with a 3.5 nm-thick SiO2 tunnel oxide and a 10...
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