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Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics...
We have experimentally investigated the trade-offs involved in thinning down the channel of III-V FETs with the ultimate goal of enhancing the electrostatic integrity and scalability of these devices. To do so, we have fabricated InAs HEMTs with a channel thickness of tch = 5 nm and we have compared them against, InAs HEMTs with tch = 10 nm. The fabricated thin-channel devices exhibit outstanding...
The scaling behavior of ultra-scaled InAs HEMTs is investigated using a 2-dimensional real-space effective mass ballistic quantum transport simulator. The simulation methodology is first benchmarked against experimental Id-Vgs data obtained from devices with gate lengths ranging from 30 to 50 nm, where a good quantitative match is obtained. It is then applied to optimize the logic performance of not-yet-fabricated...
We theoretically estimate the performance limits of the effective injection velocity, vs, and fT in the nano-scale InAs HEMTs using the quantum-corrected Monte Carlo (MC) method. The negative tail of the momentum distribution function, f(x, kx) at the potential bottleneck is caused by the electron scatterings. As Lg decreases, the negative tail decreases: which results in the increase of vs. Because...
High-performance 130 nm E-mode InAs p-HEMTs is fabricated using the Ne-based ALET and the buried Pt gate technology. Results from the combination of the improved gate-to-channel aspect ratio achieved by the buried Pt gate technology show that performance of the device is remarkable and the improved carrier transport property is achieved using the ALET technology.
80-nm high electron mobility transistors (HEMTs) with different indium content in InxGa1-xAs channel from 52%, 70% to 100% have been fabricated. Device performance degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8 V (InAs/In0.7Ga0.3As), >1 V (In0.7Ga0.3As) and >1.5 V (In0.52Ga0.48As), respectively. The impact ionization...
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