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We present results on the effects of inserting a heterostructure barrier along the channel of vertical wrapped insulator-gate field-effect transistors (WIGFETs). Two sets of devices were fabricated, one InAs WIGFET and one with a 50-nm-long InAs0.8P0.2 segment in the channel. This addition of P induces a barrier in the conduction band of 130 mV, measured from the Fermi-level. The barrier blocks the...
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