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Through-Silicon Vias (TSVs) have recently aroused much interest because it is a key enabling technology for three-dimensional (3-D) integrated circuit stacking and silicon interposer technology. In this study, a 3-D 1/8th symmetrical nonlinear finite element model of a stack die TSV package was developed using ANSYS finite element simulation code. The model was used to optimize the package for robust...
The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric interconnects in applications like highly integrated system-in-package (SIP) and high-speed circuitry design. The authors of this paper explore the 3D full-wave modeling of through Si vias...
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