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The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the...
As part of our ongoing research program to produce a high-efficiency, low-cost, photovoltaic cell based on the fullerene C 60 , we report here on our first attempts at the intercalative doping of C 60 thin films by the electrodiffusion of metals. Semiconductor behavior with decreased values of conductivity activation energy has been demonstrated for the doped samples. The...
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