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In this work, we report on the passivation of porous silicon (PS) by tungsten trioxide (WO3) nanostructured thin films deposited via dip-coating of PS in tungsten hexachloride and water/ethanol solution. Structural analysis by Fourier transform infrared spectroscopy showed a partial disappearance of SiHx and SiOSi peaks after WO3 thin film deposition on the PS due to the replacement of H atoms by...
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