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A narrow process window for the fabrication of p-type semiconductors is one of the major challenges in implementing tin oxide (SnOx) in thin film transistor applications. The SnOx lattice was doped with Al to widen the process window and enhance the p-type channel thin film transistor performance with co-sputtering process. A change in the growth orientation direction with the presence of Al in SnO...
We proposed the fabrication of Li–Zn–Sn–O (LZTO) thin film transistors (TFTs) using a magnetron co-sputtering method. To analyze the effects of Li incorporation on the amorphous LZTO TFTs, Hall measurement and X-ray photoelectron spectroscopy were performed. It was found that the increased addition of Li to the ZTO system caused the suppression of carrier creation. At an optimized condition (~12at...
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