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A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
A critical infrastructure (CI) consists of those physical and information technology facilities, networks, services and assets which, if disrupted or destroyed, have a serious impact on the health, safety, security or economic well-being of citizens or the effective functioning of governments. Nowadays, the operation controls of these infrastructures have been computerized and have gradually become...
As digital resources increasingly growing and the economic benefit of digital intellectual property rights being increasingly important, people has been increasingly emphasis on information security issues brought by the data remnants in storage devices. They try their best to prevent the potential risks. In this paper, we survey comprehensively related technologies, standards and trends of erasure,...
Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the breakdown condition in Geiger mode at low voltage...
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