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We report for the first time the use of rare-earth chalcogenides as buffer layers on silicon substrates prior to the high vacuum epitaxy of IV-VI compounds for the growth of thin film heterostructures and superlattices. The results of X-ray diffraction characterisation showed that YbS grows at 900-950 °C on (001) Si as a high-quality single crystal layer with an X-ray rocking curve half width δ =...
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