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Hydrogenated silicon-rich nitride (SRN) films of various stoichiometry (SiN x :H, 0.7<x≤1.3) were deposited on single-crystalline Si substrates with the use of plasma enhanced chemical vapor deposition at a temperature of 100°С. Furnace annealing for 5h in ambient Ar at 1130°С under atmospheric and enhanced hydrostatic pressure (HP — 11kbar, 1.1GPa) was applied to modify the structure of...
Photoluminescence and optical properties of porous oxide films formed by two-step aluminum anodization at a fixed current 200mA have been investigated. It was found that the crystallographic structure depend strongly on the annealing temperature. X-ray diffraction (XRD) reveals an amorphisation of the porous oxide films after annealing. This evolution has been confirmed by Raman spectroscopy measurement...
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