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High quality ZnS/GaAs and ZnS/GaP epilayers are grown by hot wall epitaxy. The full width at half maximum (FWHM) of the double crystal rocking curves (DCRC) and photoluminescence (PL) are measured to investigate the crystalline quality of ZnS/GaAs and ZnS/GaP epilayers. The best value of the FWHM of the DCRC for ZnS/GaAs epilayers at 3.8 μm thickness is 373 arcsec, and for ZnS/GaP epilayers at 4.7...
Single crystals of Cd 1-x Mg x Se ternaries grown by the vertical gradient freezing technique are characterized by X-ray diffraction and electron probe microanalysis as well as wavelength-modulated reflectivity and photoluminescence to establish their basic structural and optical properties. In the composition range 0<x<0.40, the alloys crystallize in the wurtzite structure...
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