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ZnO thin films have been deposited on GaN and ZnO substrates at substrate temperatures up to 750 °C by radio-frequency sputtering using ZnO ceramic targets in pure argon or in a mixture of argon and oxygen. By optimizing the sputter parameters, such as sputtering power, Ar/O 2 sputtering gas ratio and temperature of the substrates high quality films were obtained as judged from the X-ray rocking...
Undoped ZnO and Zn 0.9 Cr 0.1 O films were prepared on Al 2 O 3 (0001) substrates using the magnetron co-sputtering technique. X-ray diffraction scans show that all films exhibit nearly single-phase wurtzite structure with c-axis orientation. Both chromium doping and growth ambient have a significant impact on the lattice constants and nucleation processes in ZnO film...
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