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We report here on Er doping in the vicinity of ordered arrays of Si nanocrystals. Using a Si/SiO 2 superlattice structure allows control of both the size and arrangement of the nanocrystals. Amorphous Si/SiO 2 superlattices with 15 periods and an additional 30 nm of top oxide are deposited by RF sputtering and plasma-enhanced chemical vapor deposition (PECVD). Erbium is implanted into...
We report on the growth of thick (up to 4 μm) p-type crystalline silicon films on silicon from silane using the technique of electron cyclotron resonance (ECR) plasma-assisted chemical vapour deposition (PACVD) at temperatures <700 °C. Epitaxial growth was obtained at ~ 680 °C for growth rates in the region of 25 nm/min. At lower temperatures the films are microcrystalline with varying degrees...
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