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This paper presents deep boron diffusion induced damages in silicon (100), (110) and (111) surfaces. The silicon (100) and (110) samples showed a broad hump at the higher angle (ω) side during x-ray Rocking curve measurement; whereas, the (111) sample shows an additional broad peak at higher angle side. All the diffused samples showed two distinct contours in reciprocal space mapping measurements...
Mono-dispersed CdSe quantum dots have been prepared by water based route using 2-mercaptoethanol at low temperatures. The structures of the CdSe nanocrystals were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The XRD pattern showed that the prepared CdSe has a cubic phase with zinc blende structure. The...
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