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This paper presents investigation of impact of high-energy ion-irradiation on properties of light emitting porous silicon (PS) through photoluminescence (PL) spectroscopy. Irradiation was performed with 100MeV Au +7 ions from a pelletron accelerator at ion doses in 10 10 -10 14 cm -2 range. The effect was associated with a blueshift (~40nm) and an...
A hybrid approach of forming a stabilizing layer of bonded carbon on porous silicon (PSi) surface by photoassisted reaction of acetylene gas at low temperatures is described. The PSi samples were made by anodization in a HF/H 2 O 2 electrolyte at a current density of 80 mA/cm 2 . Samples show a strong luminescence with a peak at 644+/-4 nm. The photoluminescence (PL) intensity...
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