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A novel structure of silicon photomultiplier (SiPM) is reported. In this structure, a vertical bulk-Si quenching resistor is introduced to replace the poly-Si resistor in the SiPM cell, which can help to improve the fill factor of the SiPM for more efficient photon detection. A current-blocking layer is inserted into the resistor layer to reduce the cross-section of the resistor so that the necessary...
Three dimensional memory systems has been argued as a potential pathway in solving the ever growing difference between comparative speeds of CPU and memory systems. In this paper, we describe a three-tier, three-dimensional SRAM macro that has been designed and fabricated in a 0.18 um FD-SOI CMOS technology. 3D stacking is found to improve wire latency as compared to planar memory structure although...
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