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Shielding structures intended to improve the performance of millimeter-wave transformers are presented. The loss mechanisms of the components are discussed and the losses related to the silicon substrate are shown to be the most relevant. A patterned ground shield and a floating shield are detailed and their influences in terms of inductance, quality-factors, coupling coefficients and minimum insertion...
This paper presents the design of an integrated inductor with AMS CMOS 0.35 mum technology. This inductor is designed to ensure the wide band LNA circuit implementation on silicon. This inductor is designed with a coplanar transmission line. This line type achieves an inductance value of 0.38 nH on the whole operating frequency band from 2 to 6 GHz.
Implementation of a high quality spiral inductor on silicon substrate is a long lasting challenge for the microfabrication researchers; in this paper a new spiral inductor which is compatible with the standard IC technology is proposed. This new inductor shows more quality factor and higher resonance frequency even though the overall inductance value remains almost the constant in compare with the...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
Fluidized bed reactors are widely used in chemical engineering, but recently there is also increasing interest for processing particulate advanced materials in fluidized bed reactors. Examples include heat treatment, plasma-assisted surface treatment, etching, and coating. In this paper, a novel process for deposition of thin metallic and metal-nitride coatings on particulate substrates is reported...
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