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We present the microfabrication and initial testing of an AFM-tip like device, or nanotorch, that is capable of generating a very localized microplasma at its tip. The submicron region near its tip provides a unique manufacturing environment where new methods for controlled direct-write micro and nanofabrication can be tested. The device has been fabricated using both surface and bulk micromaching...
In this work, an atmospheric pressure plasma device, which was constructed as a coaxial arrangement with a discharge electrode and a quartz tube of 6 mm in an inner diameter, was experimentally investigated. The plasma under the atmospheric pressure condition was formed into a noble gas (Ar) stream exposed to dielectric barrier discharges controlled by pulse high-voltage applications. The atmospheric...
This paper investigated the ability of the etched wall angle controllable. We used silicon with a patterned wet film photo resistance as a base substrate. A slider is fabricated by the reactive ion etching (RIE) process. In the RIE process, the controllable factors were designed based on a design of experiment approach. And the mathematical model of the reactive ion etching (RIE) process, with the...
In this paper is detailed a technique for the plasma etching of silicon carbide (SiC) utilizing aluminum nitride (AlN) as a masking material. The fabrication technique enables the use of non-metallic etch masks to etch SiC which can aid in preventing micromasking defects on the etch surface and degradation in the health of plasma etch tools. This is the first report of this fabrication process. Through...
Large-area GaAs nanowires are fabricated by using SiO2 nanoparticles as a mask. SiO2 nanoparticle monolayer is spin-coated on the GaAs substrate and GaAs nanowires are etched by induced-coupled plasma reactive ion etcher.
This paper reports the development of a single-mask CMOS-compatible process for creating three dimensional buried channels (3DBCT). The structures are formed in silicon using isotropic SF6 plasma etching in a deep reactive ion etcher and are then sealed by depositing a low-stress dielectric material using low-temperature plasma enhance chemical vapor deposition. Utilizing reactive ion etch lag, this...
Novel dual-scaled superhydrophobic nano-flower surfaces were fabricated by 1-mask photolithography, DRIE and carbon nanotube (CNT) microwave plasma enhanced CVD (MPCVD). Patterned structure was characterized by SEM, TEM and AFM techniques. With the additional petal-like CNT structure, the apparent contact angle (ACA) increased dramatically compared with silicon (~140%) and parylene-coated (~78%) micropillar...
Summary form only given. Plasma polymerization, so called remote plasma enhanced chemical vapour deposition (RPECVD) has been increasingly used in microsystems field. Plasma polymers served primarily as supports for electronic sensors or carriers for biomolecules and cell attachment. This work describes the first use of plasma thin film deposition for the easy, fast and reduced cost fabrication of...
Physical damages to Si substrate induced by energetic ions from plasma, associated with Si recess, is studied. By using molecular dynamics (MD) simulation, we clarified the structural picture of the damage. By spectroscopic ellipsometry (SE) measurements, we experimentally analyzed damaged layer thickness and energy band structure. Comprehensive analysis of the damage suggests device performance degradation...
Plasma cleaning technology is used for different applications in backend packaging applications. Plasma cleaning is used to improve capability and performance of: (a) wirebonding (etching) (b) thermosonic flipchip (etching) (c) underfill (surface activation) This presentation sets focus on individual process solutions how to improve those backend processes. Different demands on process and equipment...
Selective emitter formation in silicon based solar cell is recently becoming a common technique to enhance the blue response of solar cell. In this work, we suggest a novel procedure based on a self alignment thought to overcome the realignment problems that still limit its industrial request. The idea is based on a plasma dry etching procedure of the emitter region using the metal grid of the cell...
Highly ordered porous anodic alumina (HOPAA) is directly fabricated on the various substrates over large areas (> 1.5 cm2) by using a "soft-imprinting" method. In this process, we employ Ar plasma etching to "soft imprint" an evaporated Al film through a free-standing HOPAA mask. The nanoindentation arrays replicated from the mask and created on the Al surface by soft imprinting...
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