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Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction onsample temperature or conductivity. Using this technique, we studied native and plasma-treatment induced defects in GaN layers grown on Si substrates deposited by metal organic chemical vapor deposition. Measurements...
The current blocking and charge accumulation effects of an ITO/Si-rich SiOx/p-Si MOS diode with buried Si nano-dots and SiOx/Si interfacial Si nano-pyramids are characterized. The ITO/Si-rich SiOx/p-Si MOS diodes exhibits the 3.5 ?? 0.2 nm large Si nano-dots with volume density of 4-5??1018 cm-3. At the SiOx/p-Si interface, the area density of Si nano-pyramids is increasing from 1.3??109 to 1.6??10...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
We have observed new charge trapping phenomena in sub-80-nm DRAM recessed- channel-array-transistor (RCAT) after Fowler-Nordheim (FN) stress. Gate stack process strongly affected the charge trapping and the trap generating in oxide bulk and interface of RCAT. According to the trapped charges and/or the generated traps after FN stress, the data retention time and writing capabilities of DRAM were dramatically...
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