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Zinc oxide (ZnO) is an emerging optoelectronic material in large area electronic applications due to its various functional behaviors. We present the fabrication and characterizations of ZnO nanostructures. The ZnO nanostructures consisting of nanorods were synthesized using sol-gel hydrothermal technique on oxidized silicon (Si) substrates. In the fabrication of ZnO nanorods, the oxidized Si substrates...
ZnO films and their Er-doped films oriented in c-axis were prepared on silicon substrate (100) by frequency magnetron sputtering method, and they were taken in heat treatment. Then, the influences on the surface morphologies and crystal structures of the film samples, which were made by the different annealing temperatures and doping concentrations, were analyzed through observing the treatment of...
In this paper we report the conclusions about the analysis between the characteristics of nitrided thin gallium nitride (GaN) films on GaAs and epitaxial GaN films on buffer nitrided films. We use the metal-organic chemical vapour deposition technique for synthesize these films. Also ones films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM).
The thermal evaporation deposition technique was used to produce zinc oxide thin film onto p-type silicon substrate at room temperature. The prepared film was post annealed at different temperature from 400 to 800degC in O2 ambient atmosphere for 20 minutes. The effect of post annealing temperature on the structural properties and surface morphological of ZnO thin films have been studied by XRD and...
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