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Power semiconductor devices made with wide-bandgap (WBG) materials such as Silicon Carbide (SiC) are improving the energy conversion efficiency, power density, and switching performance of converters. This paper presents a comparative performance evaluation of Si IGBT, SiC JFET, and SiC MOSFET power devices implemented in an otherwise identical, non-isolated dc-dc boost converter. Switching characteristics...
Power density increase is one of the challenges of Wind Power Converters and the use of Silicon Carbide semiconductors is a promising solution due to the enhanced performance in terms of switching behaviour. This is demonstrated on an existing Wind Power Converter with a hybrid module of SiC based Diode and Silicon IGBT.
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
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