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Interleaved switching of parallel inverters has previously been proposed for efficiency/size improvements of grid connected three-phase inverters. This paper proposes a novel interleaving method which practically eliminates insulated gate bipolar transistor (IGBT) turn-on losses and drastically reduces diode reverse recovery losses. The reduction in switching losses are obtained by interleaving two...
The permanent demand on increasing output power and density of Medium Voltage Converters in different applications is pushing up the need of new devices with higher current rates in the market. Semiconductor manufacturers are evolving their technology in order to achieve higher current rates [1-4], especially based on higher junction temperature operation, new chip layout which enhances the thermal...
In this paper, the effect of different stray inductances on the performance of various combinations of different types of IGBTs and freewheeling diodes was studied. Therefore, a fast switching IGBT4 HighSpeed was combined with either a SiC Schottky diode or a Si bipolar diode. It was analyzed how the switching losses are affected by the type of the freewheeling diode, the stray inductance and to what...
In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value...
The dynamic IGBT model is characterized with a circuit simulator characterization tool by utilizing datasheet information and after that the model is tuned by using data from experimental measurements. The circuit simulator simulation results from both models are compared with the experimental results and the possible accuracy improvements are reported. The main research question of this work is how...
Increase of power density and performance at simultaneously decreasing cost has always been the one way direction in power semiconductors world. It is shown that this will last also in foreseeable future, even more with new semiconductor materials. Common to old Si and new materials like SiC and GaN devices is that all of them head for higher current densities with a need for higher operating temperatures...
This paper evaluates switching and conduction losses of a direct AC fed converter for switched reluctance machine drives. The commutation process of the converter employing space vector modulation is analyzed, and the switching losses associated with ldquohardrdquo turn-on and ldquohardrdquo turn-off events are quantified based on experimentally validated device characteristics. It is shown that for...
Using MOS-controlled semiconductors provide the opportunity to directly affect the voltage and currents gradients during the switching transients at the gate. An active gate driver is presented that imposes optimised gate current profiles in order to limit the dv/dt and di/dt. When limiting the dv/dt to 1 kV/mus the switching losses are be reduced by 35% in comparison to the common limitation method...
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