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In this paper, the effect of different stray inductances on the performance of various combinations of different types of IGBTs and freewheeling diodes was studied. Therefore, a fast switching IGBT4 HighSpeed was combined with either a SiC Schottky diode or a Si bipolar diode. It was analyzed how the switching losses are affected by the type of the freewheeling diode, the stray inductance and to what...
In this paper, we suggest a new behaviour for a MOSFET bidirectional switch for AC main application. We use two transistors of high voltage power MOSFET new technology based on the CoolMOS, one to control the forward current, and the second one to short-circuit the complementary diode, thus, for the first time, significantly decrease its power dissipation. For that, we must improve the power transistor's...
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